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M. C. RAO1,* , O. M. HUSSAIN2
LiCoO2 thin films were prepared by pulsed laser deposition technique (PLD) in the partial pressure rage 50-300 mTorr. The optical absorbance of LiCoO2 thin films have been studied in the vicinity of the fundamental absorption edge at substrate temperature of 600 0C in relation to the oxygen partial pressure. A gradual increase of the optical transmission from 400 to 1000 nm with the appearance of a prominent dip at 750 nm is observed. This feature is pronounced for the crystallized film grown in oxygen partial pressure of 200 mTorr. The variation of the optical absorption near the fundamental edge allows determining the energy gap between d-bands of LiCoO2. Band gap energies of 2.36 and 2.28 eV for films grown in pO2 = 50 mTorr and pO2 = 200 mTorr, respectively, with accuracy 0.02 eV were measured. Increment in oxygen partial pressure leads to an increase of the electrical conductivity of order of magnitude from 8 x 10 –7 S/cm to 2 x 10 –7 S/cm for LiCoO2. The increase of electrical conductivity could be connected with the decrease of the activation energy. These results suggest that the open and porous structured LiCoO2 films find potential applications as binder free electrode in the fabrication of all solid state microbatteries..
LiCoO2 thin films, PLD, Optical, Band gap, Electrical, Activation energy.
M. C. RAO, O. M. HUSSAIN, Influence of oxygen partial pressure on optical absorption and electrical conduction behavior of LiCoO2 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.245-248 (2012).
Submitted at: Jan. 12, 2012
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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