"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Influence of sputtering times on the structural and op-tical properties of Al thin films for radiation-proof ap-plications

XIN JI1,* , XIAONAN WU2, JIANYONG TENG1,* , YIMING MI1, CHAO MIN ZHANG1, LINJUN WANG3

Affiliation

  1. College of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620, China
  2. College of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
  3. College of Material Science and Engineering, Shanghai University, Shanghai 200072 , China

Abstract

Al thin films for radiation-proof applications were successfully deposited by magnetron DC-sputtering with different sputtering times (15, 30 and 60 min). The effect of sputtering time on the film structures, morphology and optical properties was investigated in detail. The results show that the increase of sputtering time is in favor to be constituted in a cubic structure with a preferential orientation of Al (111), (200), (220) and (311) diffraction planes. Moreover, the morphology results implied that increasing sputtering time could vary the structure and increase the grain density and size. Finally, it is also indicated that 60 min is the best sputtering time for the optical properties in all samples..

Keywords

Thin film, Al, Sputtering time, Radiation-proof, Optical properties.

Citation

XIN JI, XIAONAN WU, JIANYONG TENG, YIMING MI, CHAO MIN ZHANG, LINJUN WANG, Influence of sputtering times on the structural and op-tical properties of Al thin films for radiation-proof ap-plications, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1081-1084 (2012).

Submitted at: Jan. 19, 2012

Accepted at: Oct. 30, 2012