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J. H. MENG1,* , X. N. ZHANG1, F. QIN1
In this paper, one contrast experiment is reported. Two identical back-gate graphene transistors samples are fabricated. One is washed by developer for 3 minutes and washed by deionized water for 10 seconds. The other is washed only by water for 10 seconds. For the first sample, the Dirac point voltage of a graphene transistor decrease 35 V, while that of a graphene transistor in the second sample increase more than 17 V. This phenomenon indicates that developer can decrease P-doping of graphene, and reasons have been analyzed. While the first sample is exposed in atmosphere for a week, Dirac point voltages are still less than those before washed. This result shows that the influence of developer has not disappeared..
Graphene, Doping, Developer.
J. H. MENG, X. N. ZHANG, F. QIN, Influence on graphene doping characteristic by developer, Optoelectronics and Advanced Materials - Rapid Communications, 11, 5-6, May-June 2017, pp.373-376 (2017).
Submitted at: Dec. 20, 2015
Accepted at: June 7, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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