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HONG ZHANG1, YI ZHANG1, X. SANG1,* , C. YU1, G. ZHOU1, J. YUAN1
To optimize the performance of quantum dot infrared detectors(QDIDs), influences of structure parameters of on the detectivity are investigated. Effects of quantum dot (QD) density, doping levels, the number of QD layers and transverse distance between QD layers have been analyzed. Increasing densities of QD and donors can enhance the detectivity, but optimized detectivity needs a proper proportion between them. QDIPs exhibit optimized detectivity with the normalized QD density between 0.3~0.6, and the detectivity is sensitive to the transverse distances between QD layers when coupling is significant. The temperature sensitivity is discussed, the theoretical results agree well with the experimental results.
Quantum dot, Infrared detector, Doping.
HONG ZHANG, YI ZHANG, X. SANG, C. YU, G. ZHOU, J. YUAN, Influences of structure parameters on the detectivity of quantum dot infrared detectors, Optoelectronics and Advanced Materials - Rapid Communications, 3, 5, May 2009, pp.395-398 (2009).
Submitted at: May 20, 2009
Accepted at: May 25, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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