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InGaN/GaN light emitting diodes grow on Si(111) substrates by ammonia flow modulation method

NAISEN YU1,2,* , HAIYING DU2, YONGQIANG ZHANG2, BOYA HU2, YAN CONG2, YUNFENG WU2

Affiliation

  1. Chongqing Key Laboratory of Micro Nano Materials Engineering and Technology, Chongqing U niversity of A rts and Sciences, Chongqing 402160, China
  2. Institute of Optoelectronic Technology, School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600, China

Abstract

InGaN/GaN light emitting diodes (LEDs) are gro wn on Si(111) substrate by metal organic chemical vapor deposition(MOCVD) in this paper. Ammonia NH 3 ) flow modulation on SiNx mask layer method was adopted to grow LED structures. Compared with the LED grown by fixing ammonia flow, the sample grown by NH 3 flow modulation shows significant decrease in the full width at half maximum (Meanwhile, the device made by ammonia flow modulation method also shows higher electroluminescence (EL) intensity and outpower. The low NH 3 flow in the initial growth sta ge can considerably increase the GaN island density on the nano porous SiNx layer by enhancing vertical growth. Lateral growth is significantly favored by high er ammonia flow in the subsequent step. This leads to extensive dislocation bending and annihilation, which is also confirmed by transmission electronic microscopy (TEM) characterization. The results show adopting ammonia flow modulation on SiNx mask layer is very promising to obtain high power LED on Si substrates..

Keywords

GaN epilayer, MOCVD, Ammonia flow modulation.

Citation

NAISEN YU, HAIYING DU, YONGQIANG ZHANG, BOYA HU, YAN CONG, YUNFENG WU, InGaN/GaN light emitting diodes grow on Si(111) substrates by ammonia flow modulation method, Optoelectronics and Advanced Materials - Rapid Communications, 7, 1-2, January-February 2013, pp.14-17 (2013).

Submitted at: March 17, 2012

Accepted at: Feb. 20, 2013