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A. L. STEPANOV1,* , YA. V. FATTAKHOV1, A. M. ROGOV1,2, D. A. KONOVALOV1, B. F. FARRAKHOV1, V. I. NUZHDIN1, V. F. VALEEV1
The paper addresses the study of monocrystalline c-Ge wafers implanted by Ag+ ions at current density J=5 µA/cm2 , dose D=2.5·1016 ion/cm2 , energy 30 keV and subjected to rapid thermal processing annealing with single light pulses of various duration from 1 to 9.5 s. It was found that annealing with an increasing pulse duration to 5 s consequently leaded to growing diameters of Ge nanowires from 26 to 35 nm, which constitute an amorphous sponge-like structure of Ag:PGe with nanowires formed by ion implantation. It was assumed that increase in the nanowire diameters occurred by the mechanism of Ostwald ripening in the samples heated during the annealing. Annealing with the pulses exceeding 5 s caused the porous structure destruction and Ag evaporation in the samples. Partial recrystallization of the implanted Ag:PGe layers annealed by incoherent light pulses with duration of more than 1 s was observed.
Ion implantation, Nanoporous germanium, Incoherent-light pulse annealing.
A. L. STEPANOV, YA. V. FATTAKHOV, A. M. ROGOV, D. A. KONOVALOV, B. F. FARRAKHOV, V. I. NUZHDIN, V. F. VALEEV, Interaction of porous germanium structure with incoherent light pulses, Optoelectronics and Advanced Materials - Rapid Communications, 17, 11-12, November-December 2023, pp.545-550 (2023).
Submitted at: May 16, 2023
Accepted at: Dec. 4, 2023
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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