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Interlayers structural design and thermal stress analysis of GaN epilayers grown on Si substrate

KAI YANG1,* , KAI YANGa,2, TIEYING MA2, JUN LOU2, SHANGZHONG JIN2

Affiliation

  1. Department of Optical Engineering, Zhejiang University, 310027, Hangzhou, Zhejiang, China
  2. Institute of Optoelectronics Technology, China Jiliang University, 310018, Hangzhou, China

Abstract

In order to analyze and design interlayers structure of GaN epilayers grown on Si substrate, finite element model based on coupled field was established. Theoretical simulation results showed that HT-AlN buffer with double LT-AlN interlayers can evident relax the tensile stress induced by the thermal mismatch between Si and GaN. Changed the thickness of the LT-AlN, the optimum value was between 20-27nm. Compared with no LT-AlN layer, thermal stress decreased was 24.1%. Optical microscopy images were corresponding to calculation results. This research shows that thermal residual stress of GaN epilayer can be effectively reduced by finite element structural and it provide a new design method for epitaxial growth using MOCVD..

Keywords

Si substrates, GaN film, AlN interlayer, Finite element, Thermal stress.

Citation

KAI YANG, KAI YANGa,, TIEYING MA, JUN LOU, SHANGZHONG JIN, Interlayers structural design and thermal stress analysis of GaN epilayers grown on Si substrate, Optoelectronics and Advanced Materials - Rapid Communications, 7, 11-12, November-December 2013, pp.831-834 (2013).

Submitted at: March 20, 2013

Accepted at: Nov. 7, 2013