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Introduction of the Ge nanostructures in a Si matrix via nanosphere lithography deposition

M. ULMEANU1,* , C. GHICA2

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, PO Box MG–16 Magurele, 077125 Bucharest, Romania
  2. National Institute for Materials Physics, Bucharest, PO Box MG-7, 077125 Bucharest-Magurele, Romania

Abstract

Experimental studies on patterning hexagonal Ge nanostructures have been conducted on Si substrates through deposition of Ge with polystyrene spheres as a mask. The size distribution of the patterned Ge nanostructures is narrow with the full width at half maximum being less than 10% of the dot size. The two-dimensional patterned Ge nanostructures were further introduced in a Si matrix. Cross-section transmission electron microscopy reveals periodic dark stripes representing the deposited Ge dots in an a-Si matrix..

Keywords

Ge, a-Si, Nanosphere, Lithography, Patterned Ge nanostructures.

Citation

M. ULMEANU, C. GHICA, Introduction of the Ge nanostructures in a Si matrix via nanosphere lithography deposition, Optoelectronics and Advanced Materials - Rapid Communications, 5, 3, March 2011, pp.278-280 (2011).

Submitted at: Jan. 13, 2011

Accepted at: March 16, 2011