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ZIXUAN LAO1, YUEHUI HU1,* , YICHUAN CHEN1, KEYAN HU1, WENJUN ZHU1, WEIQIANG SHUAI1
In this work, tin-doped zinc oxide (TZO) thin films was deposited on quartz glass substrate using a sol-gel technique. The effects of various annealing temperature on structural, optical and electrical properties of the TZO thin films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-VIS spectrophotometer and Hall effect measurement system, respectively. XRD patterns reveal that all the films have a polycrystalline structure with a preferential orientation along the (002) plane. The crystallite size and lattice parameter values of the thin films was calculated. Calculations showed that the average size of TZO thin films increased from 17.1 to 28.6 nm with increasing annealing temperature from 450 to 600℃. Moreover, the average optical transmittance of the TZO thin films was over 85% in the wavelength range of 300~1000 nm. The optical band gap of TZO thin films increased from 3.193 to 3.256 eV with increasing annealing temperature from 450 to 600℃. Among of the TZO thin films in this work, films annealed at 500℃ exhibited the best photoelectric properties, namely average transmittance of 93.2%, a carrier concentration of 2.0271020cm-3 and a resistivity of 6.97910-3Ω·cm..
: Sol gel, Sn doped ZnO, Annealing temperature, Photoelectric properties.
ZIXUAN LAO, YUEHUI HU, YICHUAN CHEN, KEYAN HU, WENJUN ZHU, WEIQIANG SHUAI, Investigation of annealing temperature on the structural, optical and electrical properties of Sn doped ZnO thin films by sol gel method, Optoelectronics and Advanced Materials - Rapid Communications, 12, 1-2, January-February 2018, pp.80-85 (2018).
Submitted at: April 11, 2017
Accepted at: Feb. 12, 2018
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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