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JADWIGA OLESIK1,*
In this work, the electron emission properties from thin, doped In2O3 and SnO2 layers (ITO) have been studied. The films of thickness from 10 nm to 300 nm were deposited on a glass substrate and exposed to the electric field and UV light. The studied emission phenomena were: the field induced secondary electron emission (FISE), the field induced electron emission (FIEE) and the field induced photoemission (FIPE). Electric field inside the emitter was found to be of the order of 1 MV/m. The FISE phenomenon is based on the Malter effect. Among others, field modification of the secondary electron spectra has been observed. The FIEE and FIPE measurements relied on determination and analysis of voltage pulse amplitude spectra from a photomultiplier. The emission yield and the electron energy distributions as a function of field intensity in the emitter, the ITO thickness and the UV illumination have been determined. A phenomenological model of the investigated phenomena has been suggested which includes four types of emission mechanisms: an ordinary one (induced exclusively by electric field) and another caused mainly by the surface, volume and tunnel effects..
ITO, Photoemission, Field effect, Emission yield.
JADWIGA OLESIK, Investigation of field electron emission from ITO/glass interfaces, Optoelectronics and Advanced Materials - Rapid Communications, 6, 3-4, March-April 2012, pp.416-421 (2012).
Submitted at: Oct. 28, 2019
Accepted at: April 11, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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