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RENU DHUNNA1,* , CHHAGAN LAL1, GARIMA AGARWAL1, S. A. KHAN2, D. K. AVASTHI2, I. P. JAIN1
Nitrides, carbides and oxides are important ceramic materials for a wide range of applications in coating, nuclear reactor and semiconductor technology. Irradiation with ion beam induces the change in their bonding properties and modifies their structural, optical and magnetic properties. The present paper reports the irradiation induced effects using Au ions in Ni3N layer deposited on Si substrate. GIXRD results confirm Ni2Si phase formation along with the peak of Ni3N (111) due to ion beam mixing. Analysis of the spectrum from Elastic Recoil Detection recommends no variation in areal concentration of nitrogen content which may be due to low volume density of nitrogen radicals. MOKE results show the formation of distorted hysteresis loop which may be attributed due to the grains of nickel silicide formed by ion-beam induced mixing..
Nitrides, Interface, GIXRD, ERDA.
RENU DHUNNA, CHHAGAN LAL, GARIMA AGARWAL, S. A. KHAN, D. K. AVASTHI, I. P. JAIN, Ion beam induced effects on structural and magnetic properties of Ni3N/Si thin film, Optoelectronics and Advanced Materials - Rapid Communications, 4, 2, February 2010, pp.187-189 (2010).
Submitted at: April 15, 2009
Accepted at: Feb. 2, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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