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J. REN1,* , W. J. Li1, L. N. SU1
A comparative study is performed on the difference of degradation behaviors between Al0.27Ga0.73N/GaN and lattice-matched In0.17Al0.83N/GaN Schottky barrier diodes (SBDs). The results indicate that, the degradation of InAlN/GaN SBDs exhibits absolutely lower “critical voltage” and more serious deterioration than that of AlGaN/GaN SBDs in step-stress experiments. By fitting the experimental data with various transport models and testing the dislocation density using cathode-luminescence microscope, a model associating with traps is proposed to address the current degradation behaviors in InAlN/GaN SBDs, which emphasizes that the enhanced Fowler-Nordheim tunneling process due to a thinner triangular barrier after stress is mainly responsible for degradation.
AlGaN/GaN, Lattice-matched InAlN/GaN, Schottky barrier diodes, Leakage current, Degradation.
J. REN, W. J. Li, L. N. SU, Leakage current degradation in lattice-matched In0.17Al0.83N/GaN Shottky barrier diodes, Optoelectronics and Advanced Materials - Rapid Communications, 15, 3-4, March-April 2021, pp.176-179 (2021).
Submitted at: Oct. 14, 2018
Accepted at: April 7, 2021
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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