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Long wavelength InAs0.05Sb0.95 photodiodes grown by melt epitaxy

Y. Z. GAO1,* , X. Y. GONG1, T. MAKINO2, H. KAN2, T. KOYAMA3, Y. HAYAKAWA3

Affiliation

  1. College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China
  2. Central Research La boratory, Hamamatsu Photonics K. K., Hamakita , Shizuoka 434 8601, Japan
  3. Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu, Shizuoka 432-8011, Japan

Abstract

InAs0.05Sb0.95 thick epilayers were grown on InAs substrates by melt epitaxy (ME). Long wavelength photodiodes made from the thick epilayers were obtained operating at 77 K. Homojunctions were formed on n-InAs0.05Sb0.95 wafers by zinc diffusion. Current-voltage characteristics of p-n junctions were measured at 50 K, 77 K and 100 K respectively. The dark current density is 2.4×10-4 A/cm2 under -10 mV bias at 77 K. Spectral photoresponse of the devices showed that 50% cutoff wavelength is 8 m, and 20% cutoff wavelength is 9 m. It indicates promising prospect for infrared (IR) detection..

Keywords

Long wavelength, InAsSb, Melt epitaxy, Spectral photoresponse.

Citation

Y. Z. GAO, X. Y. GONG, T. MAKINO, H. KAN, T. KOYAMA, Y. HAYAKAWA, Long wavelength InAs0.05Sb0.95 photodiodes grown by melt epitaxy, Optoelectronics and Advanced Materials - Rapid Communications, 13, 9-10, September-October 2019, pp.515-518 (2019).

Submitted at: Jan. 14, 2019

Accepted at: Oct. 9, 2019