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MOHAMMADREZA SAEIDI1,*
A novel model is presented to explain the low-temperature growth mechanism of silicon nanotube (SiNT) in catalytic chemical vapor deposition. The developed model is based on kinetic theory of gases and phonon vibrations of SiNT on catalyst and is in agreement with reported experimental works. Simulations demonstrate that the SiNT can grow more than 5m and growth is saturated at a certain time. Also investigations show the existence of an optimum temperature and an optimum catalyst for growth process. Finally, effect of the partial pressure of decomposed feedstock gas on the SiNT growth is presented..
Silicon nanotube, Catalytic chemical vapor deposition, Physical modeling, Kinetic theory, Lennard-Jones potential.
MOHAMMADREZA SAEIDI, Low-temperature growth mechanism of Silicon 1-D structure, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.740-743 (2016).
Submitted at: Jan. 11, 2016
Accepted at: Sept. 29, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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