Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
M. SOLAIMANI1,*
In this study, we investigate the geometrical potential and magnetic field effects on electronic properties of AlN/GaN Constant Total Effective Radius Multi-Wells Quantum Rings (RETC-MWQRs) and Constant Total Effective Radius Multi-Wells Quantum Dots (CTER-MWQDs) including an on-center donor impurity. We have seen that, the magnetic field effect on ground state energy of single-well CTER-MWQDs is more remarkable than other energy levels. Systems with larger inner quantum rings (or dot) radiuses (Rin) undertake more changes in ground state energy by increasing the number of wells. We have also shown that for systems with larger Rin, the ground state energy increases more rapidly when the magnetic field increases. For single-well CTER-MWQRs the ground state wave function is localized within the center of the quantum well. At low magnetic fields, maximum probability of finding the electron occurs in the central quantum well while at high magnetic fields the maximum probability occurs at the well which is nearer to the center of the quantum dot (or ring). By increasing the magnetic field, we have stronger localization. The final fact is that, by means of the number of wells, quantum dot (or ring) radiuses and magnetic field, we can control the localization of the ground state wave function (i.e. the free carrier distribution) within our quantum structure and at the same time alter the electronic properties..
Constant total effective radius multi-wells quantum rings, Subband energies, Ground state wave function, Oscillator strength, Magnetic field, On-center donor impurity.
M. SOLAIMANI, Magnetic field effects on electronic properties of multi-wells quantum rings and dots with an on-center donor impurity, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.595-602 (2018).
Submitted at: Nov. 22, 2017
Accepted at: Oct. 10, 2018
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.