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Micro-Raman and micro-PL investigation of ZnO: Cu nanowires for optoelectronic applications

TH. GANETSOS1, J. KOVÁČ2,3, J. KOVÁČ JR.2,3, LEDA G. BOUSIAKOU1,4,5,* , R. QINDEEL5, W. A. FAROOQ5, OMAR M. ALDOSSARY5,6

Affiliation

  1. Department of Automation Engineering, Piraeus University of Applied Sciences, Thivon 250, Athens, Greece
  2. International Laser Center, Ilkovicova 3, Bratislava, Slovakia
  3. Slovak University of Technology, Faculty of Electrical Engineering and Information, Bratislava, Slovakia
  4. IMD Laboratories, El.Venizelou 29, Athens 12351 Greece
  5. Department of Physics and Astronomy, King Saud University, Riyadh, Saudi Arabia
  6. The National Center for Applied Physics, KACST, P.O. Box 6086, Riyadh 11442, Saudi Arabia

Abstract

This work aims to study alterations in the crystalline structure of Cu doped ZnO nanowire clusters using micro-Raman spectroscopy and micro-photoluminescence (μ-PL) studies using the 325nm laser line of a He-Cd laser after transferring to a Si/SiO2 substrate. The samples were prepared via the sol-gel route and doped at 0.1, 0.3, 0.5 and 0.8% of Cu concentrations on glass substrates. The coating solution was prepared using zinc acetate as the dissolved precursor material, with a molarity of 0.2M. Furthermore 2-methoxyethanol was used as a solvent and copper acetate for doping purposes. The stabilizer was mono-ethanolamine (MEA) with the molarity ratio of the stabilizer and zinc acetate being 1. Miro-Raman spectroscopy revealed that Cu causes at the interstitial sites a distortion in the ZnO lattice, breaking down its translational symmetry which leads to increased intensity of the A1(LO) polar optical phonon modes near 570-580 cm-1 as well as their broadening. Furthermore the μ-PL spectrum of the polycrystalline nanowires was characterized by a weak peak in the near-UV region due to the ZnO near-band-edge emission and a stronger broad peak in the visible as a result of the defect amount in the mid-gap region as well as green emission that is frequently associated to O-vacancies in ZnO..

Keywords

ZnO, Cu, nanowires, doping, micro-Raman, photoluminescence (PL).

Citation

TH. GANETSOS, J. KOVÁČ, J. KOVÁČ JR., LEDA G. BOUSIAKOU, R. QINDEEL, W. A. FAROOQ, OMAR M. ALDOSSARY, Micro-Raman and micro-PL investigation of ZnO: Cu nanowires for optoelectronic applications, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.716-719 (2016).

Submitted at: May 3, 2016

Accepted at: Sept. 29, 2016