"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Microwave dielectric properties of SiC(B) solid solution powder prepared by combustion synthesis

X. SU1,2,* , W. ZHOU2, J. XU1, Z. LI3, F. LUO2, D. ZHU2, J. WANG1

Affiliation

  1. College of Mechanical & Electronic Engineering, Xi’an Polytechnic University, Xi’an shaanxi, 710048, PR China
  2. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an shaanxi, 710072, PR China
  3. School of Technical Physics, Xidian University, Xi’an shaanxi, 710071, PR China

Abstract

B-doped SiC powders were synthesized via combustion reaction of the Si/C system in a 0.1MPa nitrogen atmosphere, using polytetrafluoroethylene as the chemical activator and boron oxide as the dopant. The prepared powders have fine spherical particles and narrow particle size distribution. The electric permittivities of β-SiC samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the β-SiC doped with 5% B2O3 has the highest real part ε' and imaginary part ε" of permittivity. The mechanism of dielectric loss by doping has been discussed.

Keywords

SiC(B), Microwave dielectric properties, Powder, Combustion synthesis.

Citation

X. SU, W. ZHOU, J. XU, Z. LI, F. LUO, D. ZHU, J. WANG, Microwave dielectric properties of SiC(B) solid solution powder prepared by combustion synthesis, Optoelectronics and Advanced Materials - Rapid Communications, 4, 9, September 2010, pp.1350-1353 (2010).

Submitted at: Aug. 7, 2010

Accepted at: Sept. 15, 2010