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Modified empirical relation of spectral linewidth by incorporating doping concentration-based correction factor for GaN-based LED

L. SHARMA1,* , S. SHARMA2, D. SHARMA3, K. K. SHARMA4

Affiliation

  1. Department of Electronics and Telecommunication Engineering, MIT Academy of Engineering, Pune, Maharashtra 412105, India
  2. Department of Electrical Engineering, Indian Institute of Technology, Hauz Khas, New Delhi, Delhi 110016, India
  3. Department of Computer Science and Engineering, Manipal University Jaipur, Rajasthan 303007, India
  4. Department of Electronics and Communication Engineering, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, India

Abstract

The spectral linewidth of an LED is an important parameter that varies with the semiconductor material used in its fabrication. The empirical formula for the spectral linewidth estimation of conventional LEDs exists, but it lacks the specific term that considers the device structure and doping levels in it. Hence its extension for multi-quantum well LED (MQWLED) structures needs some correction and modification. This paper presents an empirical relation for estimating the spectral linewidth of a multi-quantum well LED based on GaN material, which considers its doping concentration. The advantage of the presented formula is that one can calculate the spectral linewidth using the semiconductor material's bandgap energy without performing any simulation or hardware implementation. The curve fitting technique has been employed for finding the correction factor in the existing empirical spectral linewidth formula. Out of many possible factors that could influence the spectral linewidth, the present work focuses on finding the effect of doping concentration in the confinement layers of the MQW-LED structure. The result can be extended to other materials and other MQW designs.

Keywords

Direct band gap, Material Dispersion, Multi Quantum Well, Peak wavelength, Spectral linewidth.

Citation

L. SHARMA, S. SHARMA, D. SHARMA, K. K. SHARMA, Modified empirical relation of spectral linewidth by incorporating doping concentration-based correction factor for GaN-based LED, Optoelectronics and Advanced Materials - Rapid Communications, 18, 1-2, January-February 2024, pp.51-57 (2024).

Submitted at: Sept. 12, 2023

Accepted at: Feb. 9, 2024