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N+-GaSb / no-GaInAsSb / P+- GaSb type II heterojunction photodiodes with low radiation damage

M. AHMETOGLU (AFRAILOV)1,* , B KIREZLI1, G. KAYNAK1, I. A. ANDREEV2, E. V. KUNITSYNA2, M. P. MIKHAILOVA2, YU. P. YAKOVLEV2

Affiliation

  1. Department of Physics, Uludag University, 16059, Görukle, Bursa, Turkey
  2. Ioffe Physico-Technical Institute, RAS, Politekhnicheskaya 26, St Petersburg, 194021, Russia

Abstract

The electrical characteristics of a double type II heterojunction in the GaSb/GaInAsSb/GaSb system with stagger ed band alignment were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. Have been investigated the radiation effect of 60Co ( )-ray source with 6 MeV photon energy and 1.5x1011 gamma/cm2 fluency on the electrical and optical characteristics..

Keywords

Dark current, Capacitance and Voltage characteristics, Photosensitivity, Gamma irradiation.

Citation

M. AHMETOGLU (AFRAILOV), B KIREZLI, G. KAYNAK, I. A. ANDREEV, E. V. KUNITSYNA, M. P. MIKHAILOVA, YU. P. YAKOVLEV, N+-GaSb / no-GaInAsSb / P+- GaSb type II heterojunction photodiodes with low radiation damage, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.517-520 (2018).

Submitted at: Jan. 15, 2018

Accepted at: Oct. 10, 2018