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JUNWEI XU1, LEI ZHANG1,* , HUI LIN1, QUAN JIANG1
Top emission organic light emitting diodes with a maximum luminance approaching 13300cd/m2 and an improved ambient stability is fabricated by applying the thermal annealing at 200℃ in vacuum after the deposition of Aluminum/Nickel-Chromium/4,4′,4″-tris[3-methylphenyl(phenyl)amino]triphenylamine: 2,3,5,6-tetrafluoro-7,7,8,8-tetracy anop -quinodimethane(Al/Ni-Cr/m-MTDATA:F4TCNQ) hole-injection stack structure. The increased luminance and relatively stable performance are attributed to the modification of doped hole-injection material morphology and changes in the metal-organic interface induced by annealing. The thermally optimized surface and nanoscale grain networks provide stronger organic contact, higher electron-hole pairs generation and higher hole mobility compared with surface and bulk morphology of unannealed hole-injection stack structure. Formation of chemical bonds across the metal-organic interface is expected as another explanation of the enhanced hole-injection efficiency..
Top emission organic light emitting diodes(TEOLEDs), Thermal annealing in vacuum, Doped hole-injection layer, Surface morphology, Metal-organic interface.
JUNWEI XU, LEI ZHANG, HUI LIN, QUAN JIANG, Nanoscale control of doped organic hole-injection layer in thermally annealed top emission organic light emitting diode, Optoelectronics and Advanced Materials - Rapid Communications, 7, 11-12, November-December 2013, pp.817-821 (2013).
Submitted at: June 30, 2012
Accepted at: Nov. 7, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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