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New nanostructured Al2Zr2-XVXO7 pyrochlore: structural, electrical and dielectric behavior evaluation for high frequency devices fabrication

S. MUMTAZ1, M. FAROOQ WARSI2, M. NAEEM ASHIQ1, N. KARAMAT1, I. SHAKIR3,*

Affiliation

  1. Institute of Chemical Sciences, Bahuddin Zakaryia University, Multan, Pakistan
  2. Department of Chemistry, Baghdad-Ul-Jadeed Campus, The Islamia University of Bahawalpur, Bahawalpur-63100, Pakistan
  3. Deanship of scientific research, College of Engineering, PO Box 800, King Saud University, Riyadh 11421, Saudi Arabia

Abstract

Nanostructured Al2Zr2O7 and its vanadium Substituted derivatives Al2Zr2-xVxO7 (x=0, 0.25, 0.50, 0.75, 1.0) were prepared by the sol-gel auto-combustion method. The pyrochlore Al2Zr2-XVXO7 nanoparticles were characterized by energy dispersive X-ray spectroscopy (EDX), Fourier-transformed infrared (FTIR) spectroscopy, X-ray diffraction (XRD). The electrical resistivity was measured at varied temperature in the range of 300 to 675 K. The maximum electrical resistivity (119.88×108 ohm cm) was observed by Al2ZrVO7 (x=1.00) while Al2Zr2O7 (x=0.00) exhibited the minimum resistivity (56.85×108 ohm cm) at the same temperature. The dielectric behavior was measured at room temperature. All the dielectric parameters were found to decrease with increase in vanadium contents. The increase in electrical resistivity while decrease in dielectric behavior on substitution suggested that these materials may find potential applications in microwave devices as such devices required highly resistive materials..

Keywords

Pyrochlore, Nanostructures, Electrical resistivity, Dielectric properties.

Citation

S. MUMTAZ, M. FAROOQ WARSI, M. NAEEM ASHIQ, N. KARAMAT, I. SHAKIR, New nanostructured Al2Zr2-XVXO7 pyrochlore: structural, electrical and dielectric behavior evaluation for high frequency devices fabrication, Optoelectronics and Advanced Materials - Rapid Communications, 9, 3-4, March-April 2015, pp.404-409 (2015).

Submitted at: Jan. 14, 2015

Accepted at: March 19, 2015