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Nickel oxide thin films grown by dc reactive magnetron sputtering at various target to substrate distances

A. MALLIKARJUNA REDDY1,* , SEUNG KI JOO2, CHANG WOO BYUN2, A. SIVASANKAR REDDY3, P. SREEDHARA REDDY1

Affiliation

  1. Department of Physics, Sri Venkateswara University, Tirupati 517502, India
  2. Research Institute of Advanced Materials, Department of Material Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea
  3. Division of Advanced Materials Engineering, Kongju National University, Cheonan City, Republic of Korea

Abstract

Nickel oxide (NiO) thin films were deposited on glass substrates at different target to substrate distances by dc reactive magnetron sputtering technique. It was observed that target to substrate distance has a great influence on the physical properties of the deposited films. The crystallite size of the films is reduced with increasing the target to substrate distance and the preferential orientation of the films was also changed. The optical results revealed that the optical transmittance of the films increased with increasing the target to substrate distance up to 70 mm thereafter it was decreased. The NiO films exhibit optical transmittance of 60 % and direct band gap of 3.82 eV at the target to substrate distance of 70 mm. The electrical resistivity decreases as target to substrate distance increases from 50 to 70 mm..

Keywords

Reactive sputtering, Target to substrate distance, Structural properties, Optical properties.

Citation

A. MALLIKARJUNA REDDY, SEUNG KI JOO, CHANG WOO BYUN, A. SIVASANKAR REDDY, P. SREEDHARA REDDY, Nickel oxide thin films grown by dc reactive magnetron sputtering at various target to substrate distances, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1041-1045 (2012).

Submitted at: May 16, 2012

Accepted at: Oct. 30, 2012