Abstract
Ultraviolet (UV) photodetectors (PDs) have garnered significant attention due to their extensive applications in civil and
military fields. Self-powered photodetectors, which can operate without an external power supply, are anticipated to play a
pivotal role in optoelectronic devices. The fabrication of heterojunction photodetectors can effectively utilize the built-in
electric field formed by heterojunctions, thereby improving the performance of photodetectors. In this study, we design and
construct a Cu2O/MgZnO type-II heterojunction self-powered UV PD using a simple sol-gel process combined with the
successive ionic layer adsorption and reaction (SILAR) method for the first time. The resulting self-powered UV PD
demonstrates a remarkable responsivity of 35.48 mA/W, a detectivity of 1.1 × 1010 Jones, and a high photo-to-dark current
ratio of 1283 under 325 nm illumination at zero bias. The built-in electric field generated by the type-II band alignment of the
heterojunction facilitates the rapid separation of photogenerated carriers at the Cu2O/MgZnO interface, thereby significantly
enhancing the self-powered performance of the UV PD. Therefore, the UV PD constructed by Cu2O/MgZnO type-II
heterojunction shows a prominent self-powered performance. Furthermore, the photodetector presents a fast response
speed with a rise time of 0.76 s and a decay time of 0.32 s. These performance metrics offer a cost-effective approach to
improving photodetector properties, strongly suggesting that the Cu2O/MgZnO UV PD holds great potential for
high-performance, self-powered visible-blind photodetection.
Keywords
Type-II heterostructure, Self-powered photodetector, Cu2O, MgZnO.
Citation
YANHUA QU, YUE ZHU, HAIYANG WANG, Novel self-powered ultraviolet photodetector with high photosensitivity based on Cu2O/MgZnO heterojunction, Optoelectronics and Advanced Materials - Rapid Communications, 19, 5-6, May-June 2025, pp.219-226 (2025).
Submitted at: Nov. 21, 2024
Accepted at: June 3, 2025