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Novel self-powered ultraviolet photodetector with high photosensitivity based on Cu2O/MgZnO heterojunction

YANHUA QU1, YUE ZHU1,* , HAIYANG WANG1

Affiliation

  1. School of Automation, Shenyang Institute of Engineering, Shenyang 110136, China

Abstract

Ultraviolet (UV) photodetectors (PDs) have garnered significant attention due to their extensive applications in civil and military fields. Self-powered photodetectors, which can operate without an external power supply, are anticipated to play a pivotal role in optoelectronic devices. The fabrication of heterojunction photodetectors can effectively utilize the built-in electric field formed by heterojunctions, thereby improving the performance of photodetectors. In this study, we design and construct a Cu2O/MgZnO type-II heterojunction self-powered UV PD using a simple sol-gel process combined with the successive ionic layer adsorption and reaction (SILAR) method for the first time. The resulting self-powered UV PD demonstrates a remarkable responsivity of 35.48 mA/W, a detectivity of 1.1 × 1010 Jones, and a high photo-to-dark current ratio of 1283 under 325 nm illumination at zero bias. The built-in electric field generated by the type-II band alignment of the heterojunction facilitates the rapid separation of photogenerated carriers at the Cu2O/MgZnO interface, thereby significantly enhancing the self-powered performance of the UV PD. Therefore, the UV PD constructed by Cu2O/MgZnO type-II heterojunction shows a prominent self-powered performance. Furthermore, the photodetector presents a fast response speed with a rise time of 0.76 s and a decay time of 0.32 s. These performance metrics offer a cost-effective approach to improving photodetector properties, strongly suggesting that the Cu2O/MgZnO UV PD holds great potential for high-performance, self-powered visible-blind photodetection.

Keywords

Type-II heterostructure, Self-powered photodetector, Cu2O, MgZnO.

Citation

YANHUA QU, YUE ZHU, HAIYANG WANG, Novel self-powered ultraviolet photodetector with high photosensitivity based on Cu2O/MgZnO heterojunction, Optoelectronics and Advanced Materials - Rapid Communications, 19, 5-6, May-June 2025, pp.219-226 (2025).

Submitted at: Nov. 21, 2024

Accepted at: June 3, 2025