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S. PIRAMASUBRAMANIAN1,* , M. GANESH MADHAN1
In this paper, extinction ratio improvement is predicted in 1.3 μm, bisection multiple quantum well laser diode employing gain lever effect. Two section laser diode is modeled by rate equations and numerically solved by fourth order Runge - Kutta method. The optical power variation with longer and shorter section currents are analyzed. Slope efficiency is evaluated for different shorter section currents at constant current injection in the longer section of the bisection laser diode. Higher slope efficiency of the gain lever case than unlever condition is utilized for extinction ratio improvement in the bisection laser diode. The effect of shorter section current on extinction ratio is analyzed. Extinction ratio is calculated for gain lever and unlever conditions for various shorter section currents. For a longer section biased of 35 mA, an extinction ratio improvement of 10.53 dB is obtained for an electrical pulse injection of 4 mA amplitude biased at 2Iath at the shorter section..
Bi section MQW laser, Gain lever effect, Extinction ratio, Optical switching, Rate equations, Numerical simulation.
S. PIRAMASUBRAMANIAN, M. GANESH MADHAN, Numerical analysis of extinction ratio improvement in gain lever laser diode, Optoelectronics and Advanced Materials - Rapid Communications, 11, 5-6, May-June 2017, pp.285-288 (2017).
Submitted at: Oct. 29, 2015
Accepted at: June 7, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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