Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
M. CIOBANU1,* , L. PREDA2, D. SAVASTRU1, S. DONTU1
In this paper we numerically compute the electric field density in SOI structures, for different distances between the silicon plates. Results show the more distant are the plates, the more is the difference in the electric field density, and the more is the distance between their maxima. Also, we can observe that light propagation in the SOI structure shows a much higher intensity than that achievable with conventional ways..
SOI, Electric field density.
M. CIOBANU, L. PREDA, D. SAVASTRU, S. DONTU, Numerical computations of the electric field density in SOI structures, Optoelectronics and Advanced Materials - Rapid Communications, 5, 7, July 2011, pp.715-717 (2011).
Submitted at: July 5, 2011
Accepted at: July 25, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.