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L. S. CHUAH1,* , Z. HASSAN1, N. SHAMSUDDIN1, N. AMIRRUDDIN1, C. W. CHIN1, H. ABU HASSAN1
In this work, InGaN/GaN/AlN is growth on Si (111) substrate by plasma-assisted molecular beam epitaxial (MBE). Structural characterization such as X-ray diffraction (XRD) is usually employed for analysis of these materials. The structure and electrical stability of the contacts at various annealing temperatures (400 o C - 600 o C) were investigated. Specific contact resistivity (SCR), ρc was determined using transmission line method (TLM). The measurement is carried out on the annealed Ti/Al contact where the electrical behaviors of each of these conditions are compared. For relatively different annealing temperatures, substantial differences of the SCR values are observed between different duration samples. This study has resulted in producing contacts from the Ti/Al metallization scheme with the lowest specific contact resistivity of ρc = 0.46 Ωcm2 after annealing in nitrogen for 30 minutes at 600 °C. However, this ρc is still considerably high for optimum device performance whereby the region of ideal contact is within 10-2 -10-4 Ωcm2.
Specific contact resistivity, InGaN, Ohmic contact, Annealing.
L. S. CHUAH, Z. HASSAN, N. SHAMSUDDIN, N. AMIRRUDDIN, C. W. CHIN, H. ABU HASSAN, Ohmic metal contact to InGaN, Optoelectronics and Advanced Materials - Rapid Communications, 2, 10, October 2008, pp.650-654 (2008).
Submitted at: July 20, 2008
Accepted at: Oct. 2, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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