OAM-RC

Abstract

The low and moderate frequency capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Al/SiO2/p-Si (MIS) structures were investigated by considering the effect of interface states (Nss) and series resistance (Rs). Experimental results show that in the existence of Rs, the forward bias C-V curves exhibit a peak at efficiently high bias region, and this peak positions shift toward lower bias voltage with decreasing frequency. In addition, the values of C and G/ω of these structures increase with decreasing frequency. The doping densities of acceptor atoms (NA) and barrier height (ΦB) obtained from the slope of the C-2 vs. V plot in the inversion region at each frequency. The values of NA give a minimum at 0.7 kHz while the values of ΦB increase with increasing frequency. In addition, the values of Rs and Nss calculated using Nicollian and Goetzberger and Hill-Coleman methods, respectively. It has been seen that the values of Rs and Nss decrease with increasing frequency..

Keywords

MIS structure, Frequency dependence, Insulator layer, Interface states, Series resistance.

Citation

İ. YÜCEDAĞ, On the anomalous peak at low and moderate frequency C-V curves of Al/SiO2/p-Si structure at the forward bias region, Optoelectronics and Advanced Materials - Rapid Communications, 3, 6, June 2009, pp.612-615 (2009).

Submitted at: April 8, 2009

Accepted at: June 15, 2009