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SUSHIL KUMAR1,* , M. A. MAJEED KHAN2
Amorphous gallium telluride nanoparticles thin films have been deposited on glass substrate using inert-gas condensation technique. Structural characteristics have been carried out by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscopy. These observations show that the prepared samples are amorphous, possess aggregates and have particle size in the range of 20–75 nm. Optical band gap and Urbach energy of samples were determined using UV-visible absorption spectroscopy. The optical absorption edge was described through electronic transition model proposed by Tauc. The bandgap is allowed direct type and is ~ 2.29 eV. DC electrical conductivity of thin films was measured in temperature range of 345-525 K and the activation energy for dc conduction process was estimated. The obtained data indicated that prepared samples behave as semiconductor material and the electrical conduction is through a thermally activated process..
a-GaTe, Nanoparticles, Thin films, Optical bandgap, Electrical conductivity, Activation energy.
SUSHIL KUMAR, M. A. MAJEED KHAN, Optical and electrical investigations of a-GaTe nanoparticles thin films prepared by inert gas condensation technique, Optoelectronics and Advanced Materials - Rapid Communications, 8, 11-12, November-December 2014, pp.1096-1099 (2014).
Submitted at: Oct. 5, 2012
Accepted at: Nov. 13, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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