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Optical and electrical properties of (Al, V) co-doped ZnO films prepared by RF magnetron sputtering

JIA HONG ZHENG1,2,* , SHI FENG NIU3

Affiliation

  1. School of Materials Science and Engineering, Chang’an University, Xi’an 710064, P. R. China
  2. Key Laboratory of Preparation and Applications of Environmental Friendly Materials of the Ministry of Education, Jilin Normal University, Siping 136000, Jilin Province, P. R. China
  3. Key laboratory automotive transportaion safety technology ministry of communication, chang’an university, xi’an, 710064, shaanxi, P. R. China

Abstract

ZnO transparent conducting thin films co-doped with Al and V were prepared on quartz substrates by radio frequency (RF) magnetron sputtering. All thin films were shown to be c-axis oriented, exhibiting only a (002) diffraction peak. The (002) diffraction peaks move to high angle direction and the c-axis lattice constant decreased with increasing Al concentration. The optical transmittance in the visible region was higher than 80 %. The optical band gap of Al and V co-doped ZnO (AVZO) thin films was broadened with increasing Al concentration. The electrical properties of AVZO films were systematically analyzed. The results indicate that Al is incorporated is more effective in improving electrical properties of AVZO films. In addition, AVZO films have ferromagnetic properties and it is expected to be considered as a promising material for spintronics..

Keywords

Semiconductors, Electrical properties, Optical properties.

Citation

JIA HONG ZHENG, SHI FENG NIU, Optical and electrical properties of (Al, V) co-doped ZnO films prepared by RF magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 8, 9-10, September-October 2014, pp.849-853 (2014).

Submitted at: Oct. 14, 2013

Accepted at: Sept. 11, 2014