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Optical band gap engineering of (MgO)x(ZnO)1-x films deposited by sol-gel spin coating

S. TEMEL1,* , M. NEBİ2, D. PEKER2

Affiliation

  1. Bilecik Seyh Edebali University, Central Research Laboratory, Bilecik, Turkey
  2. Eskisehir Osmangazi University, Physics Department, Eskisehir, Turkey

Abstract

The effects of magnesium oxide (MgO) doping on the characteristics of zinc oxide (ZnO) films have been investigated in this study. (MgO)x(ZnO)1-x thin films were deposited by sol-gel spin coating technique with different MgO concentrations. The structural, surface, optical and electrical properties of the films were characterized and the effects of doping on these properties were investigated. It was observed that the band gap of the (MgO)x(ZnO)1-x films can be adjusted by increasing the x values from 0 to 1. In addition structural, surface and electrical properties of the films were determined to vary according to the dopant concentration..

Keywords

MgZnO thin films, Sol-gel preparation, Semiconductors, Band gap engineering.

Citation

S. TEMEL, M. NEBİ, D. PEKER, Optical band gap engineering of (MgO)x(ZnO)1-x films deposited by sol-gel spin coating, Optoelectronics and Advanced Materials - Rapid Communications, 12, 1-2, January-February 2018, pp.76-79 (2018).

Submitted at: April 21, 2017

Accepted at: Feb. 12, 2018