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Optical crosstalk in interdigitated lateral PIN photodiodes

P. S. MENON1,* , B. BAIS2, AIMI AZRI MOHD JHI2, S. SHAARI1

Affiliation

  1. Photonics Technology Laboratory (PTL) Institute of Micro Engineering and Nanoelectronics (IMEN)
  2. Department of Electrical, Electronics and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia 43600 UKM, Bangi, Selangor, Malaysia

Abstract

This paper presents an investigation of the optical crosstalk in lateral interdigitated PIN photodiodes (ILPP) with top illumination. Three different substrates were used; silicon, germanium and indium gallium arsenide. Device parameters that were evaluated were the doping concentration in the p+ and n+ wells, the absorption layer thickness and the distance between the electrodes on each one of these substrates. From the evaluation of 27 types of ILPP, it was discovered that the absorption layer thickness of 1 μm on an InGaAs substrate has the lowest crosstalk value of -143.65 dB. Usage of numerical evaluation prior to actual device fabrication reduces device fabrication cost and time as well as provides an insight into the physics of the device which may not be executable in the actual fabricated device..

Keywords

Interdigitated, Photodiode, Crosstalk, Numerical modeling, Lateral, p-i-n.

Citation

P. S. MENON, B. BAIS, AIMI AZRI MOHD JHI, S. SHAARI, Optical crosstalk in interdigitated lateral PIN photodiodes, Optoelectronics and Advanced Materials - Rapid Communications, 6, 5-6, May-June 2012, pp.535-538 (2012).

Submitted at: April 3, 2012

Accepted at: June 6, 2012