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Optical properties of Mn+ doped GaAs

HUIYING ZHOU1,2,3,* , SHENGCHUN QU2, SHUZHI LIAO3, FASHENG ZHANG1, JUNPENG LIU2, ZHANGUO WANG2

Affiliation

  1. Computer & Information Engineering School, Central South University of Forestry and Technology, Changsha 410004, People’s Republic of China
  2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China
  3. Key Laboratory of Low Dimensional Quantum structures and Quantum Control Ministry of Education, Department of Physics, Hunan Normal University, Changsha 410081, People’s Republic of China

Abstract

Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. The room temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. A strong peak was found for the sample annealed at 950℃ for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magneto-optical properties and energy level engineering.

Keywords

Photoluminescence, Ion implantation, Manganese, GaAs.

Citation

HUIYING ZHOU, SHENGCHUN QU, SHUZHI LIAO, FASHENG ZHANG, JUNPENG LIU, ZHANGUO WANG, Optical properties of Mn+ doped GaAs, Optoelectronics and Advanced Materials - Rapid Communications, 4, 6, June 2010, pp.784-787 (2010).

Submitted at: March 1, 2010

Accepted at: June 16, 2010