Abstract
Si
1 x Ge x O 2 thin films were prepared by radio frequency (RF) magnetron sputtering and annealing treatment method.
Ge/GeO2 core-shell nanoparticals (NPs) embedded in SiO 2 matrix were identified by high resolution transmission electron
micros cope (HRTEM), with a size of ~4 nm in diameter. The affect of annealing temperature on the microstructural and
photoluminescence (PL) properties of the thin films were investigated. Specimen exhibited red and near infrared light
emission at room temperatur e. The position of 780 nm PL peak was independent with annealing temperature, which was
ascribed to the electron transition in Ge O related defects. As for ~900 nm light emission, quantum confinement effect was considered as a possible transition mechanism..
Keywords
P hotoluminescence, Si 1 x Ge x O 2 thin films, Quantum confinement effect.
Citation
KUN ZHONG, MIN LAI, HONGYAN WU, Optical properties of Si 1 x Ge x O 2 thin films prepared by radio frequency magnetron sputtering method, Optoelectronics and Advanced Materials - Rapid Communications, 10, 1-2, January-February 2016, pp.37-39 (2016).
Submitted at: July 16, 2013
Accepted at: Feb. 10, 2016