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A. L. STEPANOV1,2,* , Y. N. OSIN2, V. V. VOROBEV2, V. F. VALEEV1, V. I. NUZHDIN1
The new results on the optical reflection of the Si surface layers implanted by silver ions at low energies of 30 keV over a wide dose range from 5.0 x 1014 to 1.5 x 1017 ion/cm2 are presented. As the ion dose of irradiation was increased, a monotonic decrease in the reflection intensity in the ultraviolet region of the spectrum was observed, due to amorphization and macrostructuring of the Si surface. On the other hand, in the long-wavelength region, a selective reflection band appears with a maximum near 830 nm due to plasmon resonance of Ag nanoparticles synthesized during implantation..
Reflectance, Implanted silicon, Ion implantation, Silver nanoparticles.
A. L. STEPANOV, Y. N. OSIN, V. V. VOROBEV, V. F. VALEEV, V. I. NUZHDIN, Optical reflectance of silicon implanted by silver ions, Optoelectronics and Advanced Materials - Rapid Communications, 11, 11-12, November-December 2017, pp.685-690 (2017).
Submitted at: May 15, 2017
Accepted at: Nov. 28, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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