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Optimization of layer thickness, doping concentration, defect density, and operating temperature for enhanced performance of RbGeBr3 - based solar cells

ANCHAL SRIVASTAVA1, SHOBHIT SHUKLA2,* , R. K. SHUKLA1, K. C. DUBEY3, NIDHI SINGH1

Affiliation

  1. Department of Physics, University of Lucknow, Lucknow-226007, India
  2. Department of Information Technology, Dr. S.M.N.R. University, Lucknow-226017, India
  3. Department of Physics, Shia P.G. College, Lucknow-226020, India

Abstract

This study explores a novel lead-free perovskite solar cell using RbGeBr3, showing potential for high power conversion efficiency and stability. To enhance its efficiency for practical applications, a detailed analysis was conducted using SCAPS1D to optimize the device architecture. The study focuses on utilizing Cu2O as the hole transport layer and ZnO as the electron transport layer to improve overall performance. Key parameters, including layer thickness, doping concentration, defect density, series and shunt resistance and operating temperature, were meticulously optimized. The parametric study resulted in remarkable outcomes, achieving a short-circuit current density of 26.04 mA·cm−2 , an open-circuit voltage of 1.09 V, a fill factor of 87.26%, and a power conversion efficiency of 24.86%.

Keywords

SCAPS simulation, Solar cell, Photovoltaic, Lead-free perovskite, RbGeBr3 , Power conversion efficiency.

Citation

ANCHAL SRIVASTAVA, SHOBHIT SHUKLA, R. K. SHUKLA, K. C. DUBEY, NIDHI SINGH, Optimization of layer thickness, doping concentration, defect density, and operating temperature for enhanced performance of RbGeBr3 - based solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 19, 11-12, November-December 2025, pp.520-538 (2025).

Submitted at: April 16, 2025

Accepted at: Dec. 2, 2025