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Optimization of process conditions of textured gallium-doped zinc oxide films for thin film silicon solar cells

Q. QIAO1, S. Z. WANG2, K. Ma3, Y. Q. WANG3, G. C. ZHANG3, Z. R. SHI3, G. H. LIa2,*

Affiliation

  1. School of Communication and Control Engineering, Jiangnan University, Wuxi 214122, China
  2. School of Science, Jiangnan University, Wuxi 214122, China
  3. Suntech Power Holdings Co., Ltd., Wuxi 214028, China

Abstract

Textured gallium-doped zinc oxide (GZO) films were prepared by post etching sputter-deposited GZO films. In order to achieve balanced optical and electrical properties, GZO films were deposited at low temperature from targets with different gallium concentrations. With the purpose of extending etching time, buffer solutions such as acetic acid and sodium acetate were added to the traditional etchant 0.5 % HCl. Finally, the optimized textured GZO films were applied as front contacts in amorphous silicon solar cells. A short-circuit current density of 14.340 mA/cm2 and an initial aperture area efficiency of 8.784 % were obtained on 16×16 cm2 substrate.

Keywords

Gallium-doped zinc oxide, Sputtering, Etching, Solar cells.

Citation

Q. QIAO, S. Z. WANG, K. Ma, Y. Q. WANG, G. C. ZHANG, Z. R. SHI, G. H. LIa, Optimization of process conditions of textured gallium-doped zinc oxide films for thin film silicon solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1144-1148 (2010).

Submitted at: March 1, 2010

Accepted at: Aug. 12, 2010