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Optoelectronic properties and band gap narrowing in chemically PbO doped TiO2 thin film

E. C. EKUMA1,* , E. V. ESABUNOR1, E. OSAROLUBE1, I. O. OWATE1, F. I. EZEMA2, E. O. CHUKWUOCHA1, M. C. ONYEAJU1

Affiliation

  1. Department of Physics, University of Port Harcourt, Rivers, Nigeria
  2. Department of Physics and Astronomy, University of Nigeria, Nigeria

Abstract

Films of PbO doped TiO2 have been deposited on the pores of polyvinylpyrrolidone (PVP) matrix at temperature of 70oC using chemical bath deposition technique. The films were annealed at temperature of 250°C at varying molar concentration of Pb(CH3COO)2.3H2O; and then characterized using UNICO UV-2102 PC. The films show that there is significant band gap narrowing (Eg is in the range 1.34 to 1.61 eV) towards the absorption edge of the visible light region. The Rutherford – Backscattering shows a thickness of 450 nm and the elemental composition of the film stiochiometric as Ti0.156O0.758Pb0.086. The optoelectronic properties of the film studied show that it can be harnessed for possible application as window material in the entire VIS region; and especially for harvesting solar radiation and photocatalysis..

Keywords

Solar cells, Optoelectronic, Band gap narrowing, Characterization, Doped titanium, Photocatalysis.

Citation

E. C. EKUMA, E. V. ESABUNOR, E. OSAROLUBE, I. O. OWATE, F. I. EZEMA, E. O. CHUKWUOCHA, M. C. ONYEAJU, Optoelectronic properties and band gap narrowing in chemically PbO doped TiO2 thin film, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.960-963 (2011).

Submitted at: May 13, 2011

Accepted at: Sept. 15, 2011