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ZHANG JUN1,2, SHAO LE-XI1,*
p-type ZnO:N thin films were prepared by thermal oxidation of RF magnetron sputtered Zn3N2 films on glass substrates. The effects of oxidation temperature on the structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance, photoluminescence (PL) and Hall effect measurements. XRD analyses revealed that Zn3N2 films entirely transformed into ZnO:N films after annealing Zn3N2 films in oxygen at 500 oC for 2 hours. Hall effect measurements confirmed p-type conduction in ZnO:N films with a low resistivity of 4.8 Ω×cm, a high hole concentration of 9.6´1018 cm-3 and a Hall mobility of 2.1 cm2/Vs. the films are highly transparent in the visible region and the absorption edge blue shifts with increasing oxidation temperature from 450 – 550 oC. The films exhibited strong excitonic UV emission and weak deep-level emission. Our results demonstrate a promising approach to fabricate low resistivity p-type ZnO with high hole concentration.
p-type ZnO films, RF magnetron sputtering, XRD, Photoluminescence.
ZHANG JUN, SHAO LE-XI, p-type ZnO nano-thin films prepared by oxidation of Zn3N2 deposited by rf magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 3, 7, July 2009, pp.676-679 (2009).
Submitted at: May 22, 2008
Accepted at: July 20, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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