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A. SH. HUSSEIN1,* , Z. HASSAN1, S. S. NG1, S. M. THAHAB1, C. W. CHIN1, H. ABU HASSAN1
N-type AlGaN/GaN/AlN heterostructure have been successfully grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si (111) substrate. The structural, optical and electrical properties of the film have been studied and investigated. X-ray diffraction (XRD) measurement reveals that the AlGaN/GaN/AlN was epitaxy grown on Si substrate with high Al mole fraction equal to 0.257 and FWHM equal to 0.528. PL spectrum exhibited a sharp and intense peak at 363.16 nm with the absence of yellow emission band, indicating good crystal quality. Raman scattering measurement reveals that the optical phonon modes of A1(Lo) and E2(H) of the AlGaN show one mode and two modes behavior, respectively. Hall effect measurement shows that the film was highly doped with carrier concentration of 3.93 x 1019cm-3..
MBE, HR-XRD, AlGaN, Hall effect.
A. SH. HUSSEIN, Z. HASSAN, S. S. NG, S. M. THAHAB, C. W. CHIN, H. ABU HASSAN, PA-MBE growth and characterization of high Si-doped AlGaN on Si (111) substrate, Optoelectronics and Advanced Materials - Rapid Communications, 4, 1, January 2010, pp.59-62 (2010).
Submitted at: Jan. 4, 2010
Accepted at: Jan. 19, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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