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L. SHARMA1,* , R. SHARMA1
In this paper, a numerical investigation of proposed hybrid QW layers in LED structures is carried out. The proposed lightemitting diode structures are obtained by combining the quantum well layers of two different direct bandgap semiconductor materials belonging to group III-V of the periodic table. The simulation results of the proposed light-emitting diode structures are compared with the conventional multi-quantum well GaN-based light-emitting diode design, and it is seen that the obtained values of the external efficiency of the proposed light-emitting diode hybrid multi-quantum well structure is higher than the efficiency of the existing multi-quantum well light-emitting diode structure. In one proposed structure, the maximum output power level increases to 17.96 mW compared to 7.7 mW in the conventional multi-quantum well GaN light-emitting diode structure. The increase in recombination rate achieved by hybrid multi-quantum well designs increases the device efficiency up to 127% from the traditional multi-quantum well light-emitting diodes.
Direct bandgap, External efficiency, Extraction efficiency, Hybrid multi quantum well, Internal quantum efficiency, Luminescence, Single quantum well, Structural design, Total internal reflection.
L. SHARMA, R. SHARMA, Performance enhancement of GaN/GaAs based hybrid multi-quantum well LED structures, Optoelectronics and Advanced Materials - Rapid Communications, 16, 7-8, July-August 2022, pp.300-306 (2022).
Submitted at: Sept. 9, 2021
Accepted at: Aug. 10, 2022
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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