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JINJIN GUO1, AIHUA LIU1,* , BAOYUAN MAN1, MEI LIU1, SHOUZHEN JIANG1, JUAN HOU1, DEMIN KONG1
High-quality β - Ga2O3 film and β - Ga2O3/ ZnO/ β - Ga2O3 film have been prepared by laser molecular beam epitaxy (LMBE) without annealing and their photoelectric characterization has been investigated. These semiconducting films were deposited on sapphire <002> substrate with 700 for photoelectric and microstucture characterization. X-ray diffraction (XRD) showed that β - Ga2O3 and ZnO peak intensity, peak position and Full Width at Half-Maximum (FWHM). X-ray photoelectron spectroscopy (XPS) illustrated the atomic composition (Ga/O) and concentration (2/1.048) of β - Ga2O3/ ZnO/ β - Ga2O3 film surface. Ultraviolet transmittance spectrum (UV) indicated the different transmittance in the same region. Additionally, the bandgap of β - Ga2O3 film and β - Ga2O3/ ZnO/ β - Ga2O3 film were calculated by Tauc’plot method, the bandgap of β - Ga2O3 film was 5.1ev, but the one of β - Ga2O3/ ZnO/ β - Ga2O3 film was 4.8 ev. Room-temperature photoluminescence spectrum (PL) of the as-synthesized β - Ga2O3 film and β - Ga2O3/ ZnO/ β - Ga2O3 film revealed blue (419 nm) and UV (385 nm) emission, respectively. In addition, electrical properties of the films were investigated by Hall Effect investigations..
Gallium oxide, Zinc oxide, Transparent, Ultraviolet.
JINJIN GUO, AIHUA LIU, BAOYUAN MAN, MEI LIU, SHOUZHEN JIANG, JUAN HOU, DEMIN KONG, Photoelectric characterization of the β - Ga2O3 film with ZnO nano-interlayer compared to the β- Ga2O3 films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.964-968 (2011).
Submitted at: July 29, 2011
Accepted at: Sept. 15, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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