Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
M. AHMETOGLU1,* , M. OZER1, O. KADİROV2
Photoelectrical properties and the spectrum of the avalanche multiplication factor versus the reverse voltage at room temperature have been studied for LPE grown for InP-InxGa1-xAsyP1-y heterostructures. The tunneling current becomes substantial at peak junction electric fields as low as 105 V/m due to the small direct energy gaps and small effective masses of the structures tested. The process of breakdown in the investigated structures was of the avalanche type. The results found for the lowering of the tunneling current in the pre-breakdown region. The temperature coefficient of the breakdown voltage ( V ) (dV dT ) B B β = 1 ⋅ > 0 was determined in the temperature range 77-300 K and its value was found to be β = 5.78×10−4K-.
Photoelectrical properties, Heterostructures, The tunneling current.
M. AHMETOGLU, M. OZER, O. KADİROV, Photoelectrical properties of InP-InGaAsP heterojunction avalanche photodiodes, Optoelectronics and Advanced Materials - Rapid Communications, 3, 6, June 2009, pp.608-611 (2009).
Submitted at: April 29, 2009
Accepted at: June 15, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.