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K. SARMAH1,* , R. SARMA1, H. L. DAS1
The samples for this study are CdSe thin films grown by thermal evaporation technique on the glass substrates held at different temperatures. The I-V curves of the films are linear up to some bias and nonlinear at high bias range. The present photoelectronic studies correspond to a bias in the linear region. The photocurrents are observed to be significantly defect controlled at all the wavelengths in the range 600 nm to 900 nm. The activation processes at dark and for different conditions of illuminations are found to contain two regions. The corresponding dark and photoactivation energies have been calculated. The spectral dependence of the absorption coefficient has been observed in the range 600-900 nm from the transmission spectra.
CdSe thin films, Photocurrent, Defect, Photoactivation energy, Absorption coefficient.
K. SARMAH, R. SARMA, H. L. DAS, Photoelectronic properties of thermally evaporated CdSe thin films, Optoelectronics and Advanced Materials - Rapid Communications, 2, 11, November 2008, pp.721-725 (2008).
Submitted at: Sept. 2, 2008
Accepted at: Oct. 30, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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