"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Photoluminescence properties and Raman analysis of Sn doped nanostructure ZnO synthesiz ed by the anneal route

NING YANG1, JUN ZENG2,* , JUN XUE2, SHIQUAN ZHANG2, LINGKUN ZENG2, YAO ZHAO2

Affiliation

  1. School of Automation, Northwestern Polytechnical University, Xi'an 710072, P. R. China
  2. School of Science, Engineering University of PAP , Xi'an 710086, P. R. China

Abstract

This work reports that Sn doped ZnO nano structure s (N Z S s) we re synthesized by annealing ZnSn alloys at different temperature for 4 hours in air . ZnSn alloys were prepared by the powder metallurgy route . The structure and optical properties were characterized by X ray diffraction (XRD), micro Raman scattering technology, field emission scanning electr on microscope (FESEM) and photoluminescence (PL) T he result of mutli peak Gaussian fitting showed that t he blue shift was more pronounced with the increasing annealing temperature , indicating that the Sn doped ZnO were obtained. The nanofiber like NZSs showed the strongest UV emission peaks. The possible growth mechanism of the N Z Ss was discussed..

Keywords

Nano structures, Crystal growth, Doped, Powder metallurgy, Photol uminescence.

Citation

NING YANG, JUN ZENG, JUN XUE, SHIQUAN ZHANG, LINGKUN ZENG, YAO ZHAO, Photoluminescence properties and Raman analysis of Sn doped nanostructure ZnO synthesiz ed by the anneal route, Optoelectronics and Advanced Materials - Rapid Communications, 11, 9-10, September-October 2017, pp.560-564 (2017).

Submitted at: Nov. 14, 2016

Accepted at: Oct. 10, 2017