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X. LIU1,* , H. LIU2, YU-ZHI XUE1
Top contact Phthalocyanine zinc Zn Pc) thin fi lm field effect transistor (TFT) with SiO2/Si3N4/SiO2 multilayer as the dielectric is fabricated and investigated. SiO2/Si3N4/SiO2 multilayer has been prepared by magnetron sputtering. Compared to SiO2 insulation layer device of the same thickness, the electrical characteristics of multilayer device were improved, such as the field effect mobility enhanced from 3 0 ×10 4 cm 2 /Vs to 5 8 ×10 4 cm 2 /V s capacitance per unit area of the gate enhanced from 10.1 nF/cm 2 to 15.3 nF/cm 2 and leakage current decreased The SiO 2 /Si 3 N 4 /SiO 2 device shows a n improved performance and on current to off current ratio of I on /I off = 0 ×10 3 . Atomic force microscope ima ges of the surface of SiO 2 /Si 3 N 4 /SiO 2 multilayer also have been studied..
Organic thin film transistor, Phthalocyanine zinc, Multilayer insulator, Carrier mobility.
X. LIU, H. LIU, YU-ZHI XUE, Phthalocyanine zinc thin film field-effect transistor with SiO2/Si3N4/SiO2 multilayer insulator, Optoelectronics and Advanced Materials - Rapid Communications, 8, 7-8, July-August 2014, pp.720-723 (2014).
Submitted at: Aug. 14, 2013
Accepted at: July 10, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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