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A. MAHYUDDIN1,* , Z. HASSAN1, C. W. CHIN1, M. H. M. MOHAMED1, K. Y. CHEONG2
We have succeeded in growing crack-free AlN cap layer on GaN with AlN buffer layer on Si (111) substrates by plasmaassisted molecular beam epitaxy. In situ reflection high-energy electron diffraction (RHEED) observation was performed to monitor the growth processes. A two-dimensional growth process lead to AlN cap layer of good crystal quality. Highresolution x-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS) line analysis were used to investigate the structural properties of the films. It was revealed that AlN is single crystalline with low defect.
AlN, GaN, Molecular beam epitaxy.
A. MAHYUDDIN, Z. HASSAN, C. W. CHIN, M. H. M. MOHAMED, K. Y. CHEONG, Plasma-assisted molecular beam epitaxy growth of crack-free AlN cap layer on GaN-based heterostructures, Optoelectronics and Advanced Materials - Rapid Communications, 4, 7, July 2010, pp.925-928 (2010).
Submitted at: June 2, 2010
Accepted at: July 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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