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YANWEI HUANG1,* , LEFAN XIAO1, XUELI LIU1, JUNHUA XI1, ZHENGUO JI1
Zinc sulfide thin films were deposited on quartz substrate from sintering targets by electron beam evaporation. The structural morphological and optical properties of the films were investigated by X ra y diffraction (XRD), scanning electron microscopy (SEM), photoluminescence and UV vis spectra XRD analysis indicated that prepared ZnS thin film showed hexagonal polycrystalline wurtzite structure with (110) preferential The structure of f ilms has the accorda nce with sintered targets by electron beam evaporation SEM images revealed the films were constituted of nanoparticles with diameter of several dozens of nanometers or even smaller, which has been vertified by calculated result of grain size. The photoluminescence spectra showed the emission peak was located at 370 nm with excitation wavelength of 250 nm, which may be caused by donor acceptor band transition. From the transmission spectra, the thickness and optical band gap have been calcula ted and fitted, and the result indicated the film has broader optical band gap, about 3.75 eV..
Zinc sulfide Thin films Electron beam evaporation Transmission Optical band gap.
YANWEI HUANG, LEFAN XIAO, XUELI LIU, JUNHUA XI, ZHENGUO JI, Pre paration and characterization of zinc sulfide thin film deposited on quartz substrate from sintered targets by electron beam evaporation, Optoelectronics and Advanced Materials - Rapid Communications, 9, 1-2, January-February 2015, pp.110-113 (2015).
Submitted at: March 12, 2014
Accepted at: Jan. 21, 2015
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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