Abstract
Aluminium doped ZnO (ZnO:Al) films were deposited on polymer substrates by RF magnetron sputtering. The influences of Al-doping concentration and deposition temperature on structure and properties of the films were investigated by X-ray diffractometery, Scanning electronic microscopy, UV-visible spectrophotometer, as well as Four-point Probes System. The results revealed that moderate Al-doping and deposition temperature were helpful to improve the crystal quality and optoelectronic properties of ZnO:Al films. The lowest resistivity of 9.5×10-3 Ωcm and the average transmittance of 76% in the
visible region was obtained for the film deposited from ZnO:2wt% Al2O3 target at 75..
Keywords
ZnO: Al, Al-doping concentration, Deposition temperature, Structural properties, Electrical and optical properties.
Citation
WANG XIAO-JING, LI DE-JUN, WANG JUN, Preparation and character of ZnO:Al transparent conductive films deposited on polymer substrates by RF magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 5, 10, October 2011, pp.1111-1114 (2011).
Submitted at: Aug. 25, 2011
Accepted at: Oct. 20, 2011