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M. G. FARAJ1,* , K. IBRAHIM1, A. SALHIN2
Chalcopyrite copper indium gallium diselenide Cu (Ga0.3 In0.7) Se2 (CIGS) nanoparticles were prepared by using dissolve copper, indium, gallium acetylacetonate and Se powder in oleylamine using hot injection methods. The CIGS nanoparticles are deposited on polyethylene terephthalate (PET) substrates using screen print technique. X-ray diffraction (XRD) showed a chalcopyrite type structure with crystallite grain size of about 43.8 nm. The chemical constituents present in the deposited CIGS thin films on PET substrates have been identified using energy dispersive X-ray analysis (EDX), the surface topographical study on the film has been performed by AFM. Optical properties of CIGS thin films deposit on PET substrates were characterized using an ultraviolet-visible spectrophotometer. Optical constants such as absorption coefficient and energy gap were determined from transmittance spectrum. The band gap of CIGS absorber layer is estimated to be 1.25 eV.
Cu (Ga0.3 In0.7) Se2, Polyethylene terephthalate, Chalcopyrite, Screen print, Thin film, Solar cells.
M. G. FARAJ, K. IBRAHIM, A. SALHIN, Preparation and study of structural and optical characterization of Cu (In,Ga)Se2 (CIGS) thin film on polyethylene terephthalate substrate by screen print technique, Optoelectronics and Advanced Materials - Rapid Communications, 4, 12, December 2010, pp.2092-2096 (2010).
Submitted at: Nov. 14, 2010
Accepted at: Nov. 29, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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