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Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

H. CHEN1, Q. Q. LEI2,* , L. B. LI2,* , Y. ZANG3, G. Q. ZHANG2, C. J. XIA2, C. H. DAI4, J. H. CHO4

Affiliation

  1. School of Science, Xi’an Polytechnic University, Xi’an 710048, China
  2. School of Science, Xi’an Polytechnic University, Xi’an 710048, China
  3. Department of Electro nic Engineering, Xi’an University of Technology, Xi’an 710048, China
  4. Department of Electrical and Computer Engineering, University of Minnesota, Minnesota, USA

Abstract

Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively..

Keywords

4H-SiC, Si nanowires, Graphene, Heterojunction, Raman spectra.

Citation

H. CHEN, Q. Q. LEI, L. B. LI, Y. ZANG, G. Q. ZHANG, C. J. XIA, C. H. DAI, J. H. CHO, Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001), Optoelectronics and Advanced Materials - Rapid Communications, 13, 11-12, November-December 2019, pp.606-608 (2019).

Submitted at: May 20, 2019

Accepted at: Dec. 10, 2019